Prof. Otto Dopfer（ベルリン工科大学）講演会

日時

4月9日（水）14時35分〜（16時05分）

場所

広島大学東広島キャンパス・理学部B305講義室

講演タイトル

Geometric and Electronic Structures and Chemical Bonding in Silicon Molecules, Ions, and Clusters: Silane Ions, Doping on the Nanoscale, and Interstellar Dust Precursors

要旨

We combine infrared and optical laser spectroscopy of mass-selected silicon-containing ions and clusters in the gas phase with quantum chemical calculations to explore their geometric and electronic structure, chemical bonding, and chemical reactivity. For polysilane ions, we observe supersaturation of pentacoordinated Si, three-center two-electron and charge-inverted hydrogen bonds, and the formation of unusual -Si-H-Si- hydride wires. Mixed SinXm clusters (e.g., X=C, O) are discussed in the context of doping on the nanoscale and the formation of interstellar silicate dust particles.

世話教員

井口　佳哉　y-inokuchi(at)hiroshima-u.ac.jp

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